Journals and Conference Digests: (Citation 550+)
X. Sun, Y. Zhang, T. Palacios, K. S. Chang-Liao, and T. P. Ma, Impacts of Fluorine-treatment on E-mode AlGaN/GaN MOS-HEMTs, Electron Devices Meeting (IEDM), 2014 IEEE International, s. 17.3 (preprint) (2014)
X. Sun and T. P. Ma, invited paper for the special issue on Reliability of high mobility channel materials, Electrical Characterization of Gate Traps in FETs with Ge and III-V Channels, Trans. Device and Material Reliability, IEEE, 13, 463-479 (2013)
X. Sun, O. I. Saadat, J. Chen, E. X. Zhang, S. Cui, T. Palacios, D. M. Fleetwood, and T. P. Ma, Total-Ionizing-Dose Radiation Effects in AlGaN/GaN HEMTs and MOS-HEMTs, Trans. on Nuclear Sci., IEEE, 60, 4074-4079 (2013)
X. Sun, O. I. Saadat, K. S. Chang-Liao, T. Palacios, S. Cui, and T. P. Ma, Study of Gate Oxide Traps in HfO2/AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors by Use of AC Transconductance Method, Appl. Phys. Letts. 102, 103504 (2013) –Research highlighted/most read
X. Sun, F. Xue, J. Chen, E. X. Zhang, S. Cui, J. Lee, D. M. Fleetwood, and T. P. Ma, Total Ionizing Dose Radiation Effects in Al2O3-gated Ultra-thin body In0.7Ga0.3As MOSFETs, Trans. on Nuclear Sci., IEEE, 60, 402-407 (2013)
X. Sun, N. Xu, F. Xue, A. Alian, F. Andrieu, B.-Y. Nguyen, T. Poioux, O. Faynot, J. Lee, S. Cui, and T. P. Ma, AC Transconductance: a Novel Method to Characterize Oxide Traps in Advanced FETs without a Body Contact, Electron Devices Meeting (IEDM), 2012 IEEE International, s.19, 462-465 (2012)
X. Sun, C. Merckling, G. Brammertz, D. Lin, J. Dekoster, S. Cui, and T. P. Ma, Improved AC Conductance and Gray-Brown Methods to Characterize Fast and Slow Traps in Ge MOS Capacitors, J. Appl. Phys., 111, 054102 (2012)
X. Sun, S. Cui, A. Alian, G. Brammertz, C. Merckling, D. Lin, and T. P Ma, AC Transconductance Dispersion (ACGD): A Method to Profile Oxide Traps in MOSFETs without Body Contact, Electron Device Letters, IEEE 33, 438-440 (2012)
X. Sun, C. Merckling, M. Heyns, J. Dekoster, and M. Caymax, Submonolayer Barium Passivation Study for Germanium (100)/Molecular Beam Epitaxial Al2O3, Appl. Phys. Letts. 98, 212903 (2011)
X. Sun, B. Sun, L.F. Liu, N. Xu, X.-Y. Liu, R.-Q. Han, and J. -F. Kang, Resistive Switching in CeOx Films for Nonvolatile Memory Application, Electron Device Letters, IEEE, 30, 334-336 (2009)
C. Merckling, X. Sun, Y. Shimura, A. Franquet, B. Vincent, S. Takeuchi, W. Vandervorst, O. Nakatsuka, S. Zaima, R. Loo, and M Caymax, Molecular Beam Deposition of Al2O3 on p-Ge(001)/Ge0.95Sn0.05 Heterostructure and Impact of a Ge-cap Interfacial Layer, Appl. Phys. Letts. 98, 192110 (2011)
C. Merckling, X. Sun, A. Alian, G. Brammertz, V. V. Afanas’ev, T. Y. Hoffmann, M. Heyns, M. Caymax, and J. Dekoster, GaSb Molecular Beam Epitaxial Growth on p-InP(001) and Passivation with in situ Deposited Al2O3 Gate Oxide, J. Appl. Phys. 109, 073719 (2011)
T. P. Ma, and X. Sun, Unipolar CMOS Logic for Post-Si ULSI and TFT Technologies, ECS Trans., 37, 207-215 (2011)
Z. -G. Liu, S. Cui, P. Shekhter, X. Sun, L. Kornblum, J. Yang, M. Eizenberg, K. S. Chang-Liao, and T. P. Ma, Effect of Hydrogen on Interface Properties of Al2O3/In0.53Ga0.47As, Appl. Phys. Letts. 99, 222104 (2011)
C. Merckling, A. Alian, X. Sun, A. Firrinceli, J. Dekoster, M. Caymax, and M. Heyns, Molecular Beam Epitaxial Growth of 6.1 Semiconductors Heterostructures for Advanced p-type Quantum Well Devices, ECS Trans., 41, 231-241 (2011)
V. V. Afanas’ev, H. -Y. Chou, A. Stesmans, C. Merckling, and X. Sun, Electron Band Alignment at the interface of (100) GaSb with Molecular-beam deposited Al2O3, Appl. Phys. Letts. 98, 072102 (2011)
M. Heyns, A. Alian, G. Brammertz, …X. Sun…et al , Advancing CMOS beyond the Si Roadmap with Ge and III/V Devices, Electron Devices Meeting (IEDM), 2011 IEEE International, s.13, 299-302 (2011)
S. Cui, C. -Y. Peng, W. -Q. Zhang, X. Sun, J. Yang, Z. -G. Liu, L. Kornblum, M. Eizenberg, and T. P. Ma, High Quality Al2O3 For Low-Voltage High-Speed High-Temperature (Up to 250°C) Nonvolatile Memory Technology, Electron Dev. Lett., IEEE, vol. 31, 1443-1445 (2010)
C.-Y. Peng, W.-Q. Zhang, X. Sun, Z.-G. Liu, S. Cui, T. P. Ma, L. Kornblum, and M. Eizenberg, A Charge-Trapping Memory Structure Featuring Low-Voltage High-Speed Operation and 250°C Retention, Device Research Conference(DRC), 261-262 (2010)
S. Cui, D. Eun, B. Marinkovic, C-Y. Peng, X. Pan, X. Sun, H. Koser, and T. P. Ma, The Dual Role of PZT in Metal-PZT-Al2O3 Structure for Nonvolatile Memory Cell, Memory Workshop (IMW), IEEE International (2010
N. Xu, L. -F. Liu, X. Sun, C. Chen, Y. Wang, D. -D. Han, X. -Y. Liu, R. -Q. Han, J. -F. Kang, and B. Yu, Bipolar Switching Behavior in TiN/ZnO/Pt Resistive Nonvolatile Memory with Fast Switching and Long Retention, Semiconductor Sci. Tech. 23, 075019 (2008)
N. Xu, L. -F. Liu, X. Sun, X. -Y. Liu, D. -D. Han, Y. Wang, R. -Q. Han, J. -F. Kang, and B. Yu, Characteristics and Mechanism of Conduction/Set Process in TiN/ ZnO/ Pt Resistance Switching Random-Access Memories, Appl. Phys. Letts. 92, 232112 (2008)
Patent:
T.P. Ma, M. J. Lee, and X. Sun, Improved Complementary Metal Oxide Semiconductor Devices, WO Patent 2010007478 (2010)
X. Sun and T. P. Ma, Bootstrapping Circuits and Unipolar Logic Circuits Using the Same, US 62/007064 in application (2014)
X. Sun and T. P. Ma, Circuitry For Ferroelectric FET-based Dynamic Random Access Memory and Non-Volatile Memory, US 62/020480, in application (2014)
Other Presentations:
X. Sun, O. I. Saadat, E. X. Zhang, S. Cui, T. Palacios, D. M. Fleetwood, and T. P. Ma, Ionizing Radiation Induced Threshold Voltage Shifts in GaN MOS-HEMTs on Si Substrates, Oral presentation Nuclear and Space Radiation Effects Conference, IEEE (2013)
X. Sun, O. I. Saadat, K. S. Chang-Liao, T. Palacios, S. Cui, and T. P. Ma, Study of Dielectric Traps in HfO2-Gated AlGaN/GaN MOSHEMTs, Poster Presentation at IEEE Semiconductor Interface Specialists Conference (SISC) (2012)
X. Sun, S. Cui, F. Xue, J. Chen, E. X. Zhang, D. M. Fleetwood, and T. P. Ma, Total Ionizing Dose (TID) Effects on Al2O3-Gated Ultra-thin Body In0.7Ga0.3As MOSFETs, Poster Presentation at IEEE Semiconductor Interface Specialists Conference (SISC) (2012)
X. Sun, S. Cui, A. Alian, G. Brammertz, C. Merckling, D. Lin, and T. P. Ma. AC Transconductance Dispersion (ACGD): a Novel Method to Profile Slow Traps, Oral Presentation at IEEE Semiconductor Interface Specialists Conference (SISC) (2011)